V-I Curve Modeling of IGBT Modules and Applications for Junction Temperature Extraction
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摘要: 绝缘栅双极型晶体管(Insulated gate bipolar transistor，IGBT)以其高效率、大容量和低成本等特点在新能源发电及储能、高压直流输电、电力牵引和电气化交通等领域应用非常广泛。然而一旦IGBT模块发生故障，将打破相关装置和设备的正常运行状态，引发一系列连锁事故，造成人员伤害和严重的经济损失。根据一项调查统计结果，光伏电站大约34%的可靠性问题是由IGBT模块故障所引发的，因此，IGBT模块可靠性问题愈发受到关注。相关研究成果表明，IGBT模块的结温与模块可靠性问题之间存在密切的关系，如何能够快速准确地获取当前IGBT模块的实时结温是IGBT模块可靠性研究的关键。通过对IGBT模块的V-I输出特性曲线进行深入分析和研究，提出一种表征IGBT模块导通压降、结温和集电极电流关系的建模方法。利用该方法建立的表征模型可以方便快捷地提取IGBT模块结温，并通过试验验证了基于该建模方法的IGBT模块结温提取策略的有效性。除此之外，该建模方法考虑到了模块键合线老化的影响，并给出了相应的模型校正方法和结温提取策略。Abstract: Insulated gate bipolar transistor(IGBT) is widely used in fields such as new energy generation and storage, high voltage direct current transmission(HVDC), electric traction, and electrified transportation due to their high efficiency, large capacity, and low cost. However, once the IGBT module fails, it will disrupt the normal operation of related devices and equipment, causing a series of chain accidents, resulting in personal injury and serious economic losses. According to a survey, approximately 34% of reliability issues in photovoltaic power plants are caused by IGBT module failures, therefore, IGBT module reliability issues are receiving increasing attention. The related research results indicate that there is a close relationship between the junction temperature of IGBT modules and module reliability issues. How to quickly and accurately obtain the real-time junction temperature of current IGBT modules is the key to IGBT module reliability research. A modeling method is proposed for characterizing the relationship between the on-state voltage, junction temperature, and collector current of IGBT modules through in-depth analysis and research on the V-I output characteristic curve of IGBT modules. The characterization model established using this proposed method can conveniently and quickly extract the junction temperature of IGBT modules, and the effectiveness of the IGBT module junction temperature extraction strategy based on this modeling method has been verified through experiments. In addition, this modeling method takes into account the impact of module bonding wire aging and provides corresponding model calibration methods and junction temperature extraction strategies.
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Keywords:
- IGBT module /
- V-I characteristic /
- modeling /
- junction temperature
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[1] CHEN Z，GUERRERO J M，BLAABJERG F. A review of the state of the art of power electronics for wind turbines[J]. IEEE Transactions on Power Electronics，2009，24(8)：1859-1875.
[2] BERNET S. Recent developments of high power converters for industry and traction applications[J]. IEEE Transactions on Power Electronics，2000，15(6)：1102-1117.
[3] 马伟明. 电力电子在舰船电力系统中的典型应用[J]. 电工技术学报，2011，26(5)：1-7. MA Weiming. Typical applications of power electronics in naval ship power systems[J]. Transactions of China Electrotechnical Society，2011，26(5)：1-7.
[4] EMADI A，LE Y J，RAJASHEKARA K. Power electronics and motor drives in electric，hybrid electric，and plug-in hybrid electric vehicles[J]. IEEE Transactions on Industrial Electronics，2008，55(6)：2237-2245.
[5] WANG H，LISERRE M，BLAABJERG F. Toward reliable power electronics：Challenges，design tools，and opportunities[J]. IEEE Industrial Electronics Magazine，2013，7(2)：17-26.
[6] WANG H，LISERRE M，BLAABJERG F，et al. Transitioning to physics-of-failure as a reliability driver in power electronics[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics，2014，2(1)：97-114.
[7] 李武华，陈玉香，罗皓泽，等. 大容量电力电子器件结温提取原理综述及展望[J]. 中国电机工程学报，2016，36(13)：3546-3557，3373. LI Wuhua，CHEN Yuxiang，LUO Haoze，et al. Review and prospect of junction temperature extraction principle of high power semiconductor devices[J]. Proceedings of the CSEE，2016，36(13)：3546-3557，3373.
[8] WU W，HELD M，JACOB P，et al. Investigation on the long term reliability of power IGBT modules[C]//International Symposium on Power Semiconductor Devices and IC’s：ISPSD’95，May 23-25，1995，Yokohama，Japan. IEEE，1995：443-448.
[9] CHOI U，BLAABJERG F，JORGENSEN S，et al. Reliability improvement of power converters by means of condition monitoring of IGBT modules[J]. IEEE Transactions on Power Electronics，2017，32(10)：7990-7997.
[10] YANG S，XIANG D，BRYANT A，et al. Condition monitoring for device reliability in power electronic converters：A review[J]. IEEE Transactions on Power Electronics，2010，25(11)：2734-2752.
[11] HU Z，DU M，WEI K，et al. An adaptive thermal equivalent circuit model for estimating the junction temperature of IGBTs[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics，2019，7(1)：392-403.
[12] MUSALLAM M，JOHNSON C M. Real-time compact thermal models for health management of power electronics[J]. IEEE Transactions on Power Electronics，2010，25(6)：1416-1425.
[13] XU Z，XU F，WANG F. Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation[J]. IEEE Transactions on Industrial Electronics，2015，62(6)：3419-3429.
[14] BRYANT A，YANG S，MAWBY P，et al. Investigation into IGBT dV/dt during turn-off and its temperature dependence[J]. IEEE Transactions on Power Electronics，2011，26(10)：3019-3031.
[15] 常垚，陈玉香，李武华，等. 基于关断电流最大变化率的压接式IGBT模块结温提取方法[J]. 电工技术学报，2017，32(12)：70-78. CHANG Yao，CHEN Yuxiang，LI Wuhua，et al. Junction temperature extraction method of crimp IGBT module based on maximum change rate of turn off current[J]. Transactions of China Electrotechnical Society，2017，32(12)：70-78.
[16] BARLINI D，CIAPPA M，CASTELLAZZI A，et al. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions[J]. Microelectronics Reliability，2006，46(9-11)：1772-1777.
[17] 方化潮，郑利兵，王春雷，等. IGBT模块栅极电压米勒平台时延与结温的关系[J]. 电工技术学报，2016，31(18)：134-141. FANG Huachao，ZHENG Libing，WANG Chunlei，et al. Relationship between gate voltage delay and junction temperature of IGBT module[J]. Transactions of China Electrotechnical Society，2016，31(18)：134-141.
[18] 孙鹏飞，罗皓泽，董玉斐，等. 基于关断延迟时间的大功率IGBT模块结温提取方法研究[J]. 中国电机工程学报，2015，35(13)：3366-3372. SUN Pengfei，LUO Haoze，DONG Yufei，et al. Junction temperature extraction of high power IGBT module based on turn-off delay time[J]. Proceedings of the CSEE，2015，35(13)：3366-3372.
[19] 姚芳，丁祥宽，胡洋，等. 基于通断延迟时间的功率模块结温探测模型[J]. 现代电子技术，2018，41(24)：28-31. YAO Fang，DING Xiangkuan，HU Yang，et al．Junction temperature detection model based on on-off delay time for power module[J]．Modern Electronics Technique，2018，41(24)：28-31． [20] DENG E，BORUCKI L，LUTZ J. Correction of delay-time-induced maximum junction temperature offset during electrothermal characterization of IGBT devices[J]. IEEE Transactions on Power Electronics，2021，36(3)：2564-2573.
[21] DUPONT L，AVENAS Y. Evaluation of thermo-sensitive electrical parameters based on the forward voltage for on-line chip temperature measurements of IGBT devices[C]//2014 IEEE Energy Conversion Congress and Exposition (ECCE)，Pittsburgh，PA，USA，2014.
[22] PENG Yingzhou，SHEN Yanfeng，WANG Huai. A converter-level on-state voltage measurement method for power semiconductor devices[J]. IEEE Transactions on Power Electronics，2021，36(2)：1220-1224.
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